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United States Patent 4,142,197
February 27, 1979

Drain Extensions For Closed COS/MOS Logic Devices
Andrew G. F. Dingwall

Filed April 3, 1978
Image of US PATENT 4,142,197

Abstract of the Disclosure

A drain extension which is employed with complementary symmetry metal-oxide semiconductor (COS/MOS) devices which are constructed with a closed geometry gate structure. This drain extension of closed geometry gate structures includes lightly doped regions which surround contacts and heavily doped regions in the areas between concentric gates where there are no contacts
Figure descriptions: cover graphic

  • a top view of a portion of a COS/MOS integrated circuit of the type employing a closed structure and including the present invention. 

 Citations [54]:
  
3,345,216  10/1967  Rogers
3,434,021  03/1969  Hofstein
National Museum of American History
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