Abstract of the Disclosure

Gettered semiconductor wafers for integrated circuit device manufacture are prepared by grinding a layer of damage into the back face of the wafer to a depth of about 8-35 microns, heating the wafer to a temperature of about 800 degrees to 1150 degrees Celsius for about 1 to 3 hours and quickly cooling the wafer to a temperature below about 600 degrees Celsius, and polishing both sides of the wafer to form a polished, substantially damage-free front face and a smooth back face which has a residual layer of crystallographic damage to provide additional gettering during device manufacture

• a plan view illustrating the damage pattern formed on the wafer.

 Citations [54]:
  
3,579,815  05/1971  Gentry
3,923,567  12/1975  Lawrence
3,701,696  10/1972  Mets
3,929,529  12/1975  Poponiak
3,723,053  03/1973  Myers et al
3,997,368  12/1976  Petroff et al
3,856,472  12/1974  Schweitzer et al
4,018,626  04/1977  Schwuttle et al
3,874,936  04/1975  d'Hervilly et al
4,042,419  08/1977  Heinke
3,905,162  09/1975  Lawrence
4,069,068  06/1978  Beyer et al