Abstract of the Disclosure

The specification describes the Schottky-gate field-effect transistor and related fabrication process wherein thin ion implanted surface stabilization regions are formed between source and gate electrodes and gate and drain electrodes of the device and to a thickness of between 100 and 1,000 angstroms. This is accomplished utilizing the source, gate and drain electrodes as an ion implantation mask against impinging inert ions which render the implanted regions semi-insulating, and this process requires no post-implantation annealing

• a gallium arsenide field-effect transistor which represents an alternative embodiment of the present invention.

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4,015,278  03/1977  Fukuta