United States Patent 4,160,984
July 10, 1979

Schottky-Gate Field-Effect Transistor And Fabrication Process Therefor
Glenn O. Ladd, Jr
Frederick W. Cleary

Filed November 14, 1977
Image of US PATENT 4,160,984

Abstract of the Disclosure

The specification describes the Schottky-gate field-effect transistor and related fabrication process wherein thin ion implanted surface stabilization regions are formed between source and gate electrodes and gate and drain electrodes of the device and to a thickness of between 100 and 1,000 angstroms. This is accomplished utilizing the source, gate and drain electrodes as an ion implantation mask against impinging inert ions which render the implanted regions semi-insulating, and this process requires no post-implantation annealing
Figure descriptions: cover graphic

  • a gallium arsenide field-effect transistor which represents an alternative embodiment of the present invention.

 Citations [54]:
3,700,978 10/1972 North et al 3,912,546 10/1975 Aunsperger et al 4,015,278 03/1977 Fukuta
National Museum of American History
HomeSearchChip TalkChip FunPatentsPeoplePicturesCreditsCopyrightComments