United States Patent 4,162,504
July 24, 1979

Floating Gate Solid-State Storage Device
Sheng T. Hsu

Filed December 27, 1977
Image of US PATENT 4,162,504

Abstract of the Disclosure

A floating gate semiconductor device is described wherein the floating gate member does not extend completely across the channel region and thus avoids alignment with the edges of the source and drain regions. The lateral displacement of the edge of the floating gate from the drain region permits stored charge on the drain to be undisturbed in the event avalanche breakdown occurs at the channel-drain junction
Figure descriptions: cover graphic

  • a cross-sectional view of an embodiment of a floating gate device built in accordance with the teaching of the present invention using a silicon on a sapphire substrate.

 Citations [54]:
3,984,822 10/1976 Simko et al 4,057,820 11/1977 Gallagher
National Museum of American History
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