United States Patent 4,163,245
July 31, 1979

Integrated Circuit Device
Hiroyuki Kinoshita

Filed December 23, 1976
Image of US PATENT 4,163,245

Abstract of the Disclosure

An integrated circuit device comprising a semiconductor substrate of one conductivity type and provided with a circuit element capable of dynamically holding electric charges and another circuit element having p-n junctions, characterized in that at least one part of that region of the substrate which surrounds the circuit element capable of holding the above-mentioned charges is formed of an absorption region having an opposite conductivity type to that of the substrate; and that said absorption region is impressed with the highest or substantially highest level of voltage among those impressed on the circuits included in the integrated circuit device, thereby enabling the absorption region to catch minority carriers injected from said another circuit element into the substrate
Figure descriptions: cover graphic

  • a cross sectional view showing an integrated circuit according to an embodiment of this invention.

 Citations [54]:
3,573,509 04/1971 Crawford 3,965,481 06/1976 Esser 3,701,198 10/1972 Glinski 4,044,373 08/1977 Nomiya et al 3,703,669 11/1972 London 3,899,793 08/1975 Wakamiya et al 3,925,120 12/1975 Saida et al
National Museum of American History
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