United States Patent 4,163,246
July 31, 1979

Semiconductor Integrated Circuit Device Employing A Polycrystalline Silicon As A Wiring Layer
Kunio Aomura
Kenji Okada

Filed February 2, 1978
Image of US PATENT 4,163,246

Abstract of the Disclosure

In a semiconductor integrated circuit, an insulating film is formed on a major surface of the substrate. An elongated wiring layer including a polycrystalline silicon layer is formed on the insulating layer. At least one metallic area is formed over the wiring layer except at the ends of the wiring layer.
Figure descriptions: cover graphic

  • a cross section of an integrated circuit device according to a first embodiment of the invention.

 Citations [54]:
3,667,008 05/1972 Katnack 3,964,092 06/1976 Wadham
National Museum of American History
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