Abstract of the Disclosure

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thinly highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that the p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

• a Schottky barrier hydrogenated amorphous silicon solar cell with a thin highly doped p-type region adjacent to the Schottky barrier high work function metal.

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