PATENT COVER GRAPHIC

United States Patent 4,163,985
August 7, 1979

Nonvolatile Punch Through Memory Cell With Buried N+ Region In Channel
Fritz L. Schuermeyer
Charles R. Young

Filed September 30, 1977
Image of US PATENT 4,163,985

Abstract of the Disclosure

A nonvolatile memory cell is disclosed that has a buried n+ layer from which charge (electrons) is injected into the insulator of n-channel MNOS (Metal Nitride Oxide Semiconductor) type devises.
Figure descriptions: cover graphic

  • schematically illustrates structure comprising a typical embodiment of the invention. 

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National Museum of American History
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