United States Patent 4,163,985
August 7, 1979

Nonvolatile Punch Through Memory Cell With Buried N+ Region In Channel
Fritz L. Schuermeyer
Charles R. Young

Filed September 30, 1977
Image of US PATENT 4,163,985

Abstract of the Disclosure

A nonvolatile memory cell is disclosed that has a buried n+ layer from which charge (electrons) is injected into the insulator of n-channel MNOS (Metal Nitride Oxide Semiconductor) type devises.
Figure descriptions: cover graphic

  • schematically illustrates structure comprising a typical embodiment of the invention.

 Citations [54]:
3,877,054 04/1975 Boulin et al 4,000,504 03/1977 Abbas et al 3,887,407 06/1975 Ono et al 4,019,198 04/1977 Endo et al 3,923,559 12/1975 Sinha 4,062,037 12/1977 Togei et al 3,936,857 02/1976 Ota 3,996,657 12/1976 Simko et al 3,996,657 12/1976 Berger
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