United States Patent 4,163,988
August 7, 1979

Split Gate V Groove FET
Keming W. Yeh
James L. Reuter

Filed January 30,1978
Image of US PATENT 4,163,988

Abstract of the Disclosure

A split gate V groove FET device mounted in a substrate with a first terminal comprising a body of a first conductive material in the apex of said V groove, said first terminal connected to a first conductive channel in a first side of said V groove to form a first transistor and said first terminal connected to a second side of said V groove to form a second transistor.
Figure descriptions: cover graphic

  • a cross section view of a plurality of split gate VMOS's according to this invention located on a common substrate and electrically isolated from each other.

 Citations [54]:
4,003,036 01/1977 Jenne 4,065,783 12/1977 Ouyang 4,070,690 01/1978 Wickstrom
National Museum of American History
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