United States Patent 4,173,022
October 30, 1979

Integrated Gate Field Effect Transistors Having Closed Gate Structure with Controlled Avalanche Characteristics
Andrew G. F. Dingwall

Filed May 9, 1978
Image of US PATENT 4,173,022

Abstract of the Disclosure

Insulated gate field effect transistors (IGFETs) having closed gate geometries and controlled avalanche characteristics are described. The shape of the closed geometry gate is altered from the rectangular shape used heretofore in order to thereby alter the shape of the drain of the transistor and to control its avalanche characteristics.
Figure descriptions: cover graphic

  • a top view of an IGFET including the present invention.

 Citations [54]:
3,917,964 11/1975 Carlson 4,025,940 05/1977 Kimura et al. 4,063,274 12/1977 Dingwall
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