United States Patent 4,173,819
November 13, 1979

Method of Manufacturing a Dynamic Random Access Memory using MOS FETs
Hiroyuki Kinoshita

Filed August 4, 1978
Image of US PATENT 4,173,819

Abstract of the Disclosure

A dynamic Random Access Memory consisting of pairs of adjacent one transistor/one capacitor memory cells. The gate electrodes of the MOS FETS in each pair of adjacent memory cells are coupled and further connected to an address line at only a single contact hole. There is also disclosed a method for manufacturing the dynamic Random Access Memory with a high integration density. The gap between one electrode of the capacitor and the MOS FET is minimized by converting the end portion of the capacitor electrode to a thin insulating film.
Figure descriptions: cover graphic

  • a sectional view of one embodiment according to this invention.

 Citations [54]:
3,570,114 03/1971 Bean 3,771,147 11/1973 Boll 4,012,757 03/1977 Koo 4,125,933 11/1978 Baldwin
National Museum of American History
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