United States Patent 4,174,982
November 20, 1979

Capless Annealing Compound Semiconductors
Anthony A. Immorlica, Jr.

Filed June 6, 1977
Image of US PATENT 4,174,982

Abstract of the Disclosure

A method is disclosed for capless annealing compound semiconductors such as ion-implanted GaAs semiconductors. The surface of the semiconductor to be protected during annealing is placed in loose physical contact with an inert material such as powdered graphite. The assembly is placed in a controlled atmosphere and heated to the annealing temperature where it is maintained until annealed. The semiconductor is cooled and then removed from the controlled atmosphere and inert material. In one embodiment, a volatile one of the elements in the compound is introduced into the inert material.
Figure descriptions: cover graphic

  • a perspective of a cross-section taken through a boat assembled with a semiconductor ready for annealing according to the invention.

 Citations [54]:
4,002,505 01/1977 Bult
National Museum of American History
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