United States Patent 4,178,605
December 11, 1979

Complementary MOS Inverter Structure
Sheng T. Hsu
James M. Cartwright, Jr.

Filed January 30, 1978
Image of US PATENT 4,178,605

Abstract of the Disclosure

A complementary MOS inverter includes transistors each of which has a dual gate structure with the threshold voltage of the channel nearest the drain of each transistor arranged to be lower than that of the channel nearest the source of each transistor. This arrangement provides the cascode characteristics of dual gate structure, i.e., high breakdown voltage, high voltage gain, low drain output conductance, and relatively fast frequency response, but allows all four gate electrodes of the transistors to be connected in common, thus enabling relatively simple layout.
Figure descriptions: cover graphic

  • a diagrammatic, partial cross-sectional view of one embodiment of the present novel inverter structure.

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National Museum of American History
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