United States Patent 4,179,792
December 25, 1979

Low Temperature CMOS/SOS Process using Dry Pressure Oxidation
Sidney Marshall
Robert J. Zeto

Filed April 10, 1978
Image of US PATENT 4,179,792

Abstract of the Disclosure

An enhancement type, self-aligned silicon gate complementary metal oxide semiconductor (CMOS)/silicon on sapphire (SOS) structure is made by generating all gate oxides and oxide isolated regions with dry oxygen at pressures above 1 atmosphere and at temperatures of 800 C. to 825 C. using ion implantation for all doping operations and plasma definition of all masking dielectrics.
Figure descriptions: no Drawings

 Citations [54]:
3,590,471 07/1971 Lepselter 4,117,301 09/1978 Goel
National Museum of American History
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