United States Patent 4,180,596
December 25, 1979

Method for Providing a Metal Silicide Layer on a Substrate
Billy L. Crowder
Stanley Zirinsky

Filed June 30, 1977
Image of US PATENT 4,180,596

Abstract of the Disclosure

A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to form the metal silicide.
Figure descriptions: cover graphic

    first cross-sectional view of one fabrication scheme for an integrated circuit employing the process of the present invention.

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National Museum of American History
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