United States Patent 4,180,825
December 25, 1979

Heteroepitaxial Deposition of GaP on silicon substrates
Donald R. Mason

Filed August 4, 1978
Image of US PATENT 4,180,825

Abstract of the Disclosure

A crack free layer of GaP is epitaxially deposited on a silicon phosphide surface of a silicon substrate having an (III) orientation. The silicon substrate is prebakes on a carbide coated susceptor with palladium diffused hudrogen at about 1200 C. and pretreated with phosphine at about 1140 C. to form the silicon phosphide surface. The temperature is lowered to 800-900 C. in the presence of phosphine and trimethyl gallium is introduced at a ratio of 1 to 10 with the phosphine. Cracks in the gallium phosphide are prevented by roughing the bottom non-phosphide surface of the silicon substrate such that the roughed surface is under compressive stress and induces tensile stress on the phosphided surface to reduce the compressive stress produce by gallium phosphide layer when the substrate is annealed at about 1200 C.
Figure descriptions: cover graphic

  • a cross-sectional view of a portion of a silicon substrate having a gallium phosphide layer thereon.

 Citations [54]:
3,766,447 10/1973 Mason 3,963,539 09/1976 Kemlage 3,985,590 10/1976 Mason 4,120,706 10/1978 Mason
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