United States Patent 4,198,648
April 15, 1980

Integrated Semiconductor Device
Jun-ichi Nishizawa

Filed May 4, 1978
Image of US PATENT 4,198,648

Abstract of the Disclosure

An integrated semiconductor device comprising : a first and a second static induction transistor each including a drain and a source, each having a first conductivity type, a current channel having the first conductivity type and located between the drain and the source, and a gate having a second conductivity opposite to the first conductivity type and located adjacent to the current channel ; and a third bipolar transistor including a collector and an emitter each having the second conductivity type, and a base having the first conductivity type and located between the collector and the emitter, the collector being connected to the gates of the first and second transistors and also to the drain of the second transistor, the source of the second transistor being connected to the source of the first transistor. The second transistor is operative for suppressing the occurrence of an unrequired excessive minority carrier injection in the first transistor.
Figure descriptions: cover graphic

  • a vertical sectional view of an example of the SITL device according to the present invention.

 Citations [54]:
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