United States Patent 4,201,603
May 6, 1980

Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon
Joseph H. Scott, Jr.
Alfred C. Ipri

Filed December 4, 1978
Image of US PATENT 4,201,603

Abstract of the Disclosure

A method for fabricating a short channel MOS device is described wherein the conductivity of the gate member is increased by a factor of about 2.5 by counterdoping a P-type doped polycrystalline line with an N-type dopant
Figure descriptions: cover graphic

  • Figures 1, 2, 3 and 4 are sectional views illustrating the steps of carrying out the method of the present invention.

  • Figure 5 is a sectional view of the short-channel MOS device made in accordance with the method of the present invention.

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3,600,651 08/1971 Duncan 3,738,880 06/1973 Laker 3,980,507 09/1976 Carley 4,026,733 05/1977 Owen et al. 4,026,740 05/1977 Owen 4,057,824 11/1977 Woods 4,057,895 11/1977 Ghezzo 4,093,503 06/1978 Harris et al. 4,124,933 11/1978 Nicholas
National Museum of American History
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