PATENT COVER GRAPHIC

United States Patent 4,201,603
May 6, 1980

Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon
Joseph H. Scott, Jr.
Alfred C. Ipri

Filed December 4, 1978
Image of US PATENT 4,201,603

Abstract of the Disclosure

A method for fabricating a short channel MOS device is described wherein the conductivity of the gate member is increased by a factor of about 2.5 by counterdoping a P-type doped polycrystalline line with an N-type dopant
Figure descriptions: cover graphic

  • Figures 1, 2, 3 and 4 are sectional views illustrating the steps of carrying out the method of the present invention.

  • Figure 5 is a sectional view of the short-channel MOS device made in accordance with the method of the present invention. 

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4,026,733  05/1977  Owen et al.
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4,057,895  11/1977  Ghezzo
4,093,503  06/1978  Harris et al.
4,124,933  11/1978  Nicholas
National Museum of American History
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