Abstract of the Disclosure

A MESFET integrated circuit device with a metal-semiconductor diode as the control element and a source and drain as other device elements is fabricated using a method which consists of an implanted channel stopper underneath a thick field oxide, implanted source and drain regions, depletion and enhancement mode device channel implants, metal-semiconductor junctions as control elements, barrier metal and a thin film metallization system. The process and device structure are suited for high packing density, very low speed power product and ease of fabrication making it attractive for digital applications.

• Figure 1 is a physical layout of a MESFET inverter

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