United States Patent 4,202,003
May 6, 1980

MESFET Semiconductor Device And Method Of Making
Henry M. Darley
Theodore W. Houston
Han T. Yuan

Filed April 21, 1978
Image of US PATENT 4,202,003

Abstract of the Disclosure

A MESFET integrated circuit device with a metal-semiconductor diode as the control element and a source and drain as other device elements is fabricated using a method which consists of an implanted channel stopper underneath a thick field oxide, implanted source and drain regions, depletion and enhancement mode device channel implants, metal-semiconductor junctions as control elements, barrier metal and a thin film metallization system. The process and device structure are suited for high packing density, very low speed power product and ease of fabrication making it attractive for digital applications.
Figure descriptions: cover graphic

  • Figure 1 is a physical layout of a MESFET inverter

 Citations [54]:
4,104,672 08/1978 DiLorenzo et al 4,139,786 02/1979 Raymond et al
National Museum of American History
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