United States Patent 4,205,330
May 27, 1980

Method Of Manufacturing A Low Voltage N-Channel MOSFET Device
Thomas Klein

Filed April 17, 1978
Image of US PATENT 4,205,330

Abstract of the Disclosure

A novel MOSFET circuit and method of manufacture utilizing a double ion implant process for manufacturing a low voltage high performance n-channel device that includes an enhancement transistor inverter combined with a depletion transistor load. The process starts with high resistivity material and uses a first ion implant process to dope the field region and to give the required threshold voltage for an enhancement device. A second ion implant is used to dope the channel region for the depletion device.
Figure descriptions: cover graphic

  • a cross section view of a completed inverter using the process of the invention.

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National Museum of American History
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