United States Patent 4,205,334
May 27, 1980

Integrated Semiconductor Device
Terumoto Nonaka
Tadahiko Hotta
Shin Yamashita

Filed July 17, 1978
Image of US PATENT 4,205,334

Abstract of the Disclosure

An integrated semiconductor device including at least one first vertical-type junction field effect transistor (vertical JFET) having a triode-like unsaturated voltage-current characteristic and at least one second vertical JFET having a bipolar-transistor-like saturated voltage-current characteristic, both being integrally formed in a semiconductor body. Both the first and second vertical JFET are much similar in general arrangement to each other, thus allowing simultaneous forming thereof by the same manufacturing process, without sacrificing the good characteristics of these two types of transistors.
Figure descriptions: cover graphic

  • a diagrammatic vertical section of an example of an integrated semiconductor device according to the present invention.

 Citations [54]:
4,117,587 10/1978 Kano et al
National Museum of American History
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