United States Patent 4,206,540
June 10, 1980

Schottky Device And Method Of Manufacture Using Palladium And Platinum Intermetallic Alloys And Titanium Barrier
Herbert J. Gould

Filed June 2, 1978
Image of US PATENT 4,206,540

Abstract of the Disclosure

A schottky diode and process of manufacture therefor is disclosed wherein a schottky junction is formed between a high work function metal, typically molybdenum, and a single crystal intermetallic alloy of either palladium or platinum with silicon. The intermetallic alloy is formed by sintering palladium or platinum with silicon at the surface of an epitaxial silicon layer, and then removing, by etching, all of the silicide which is formed. The intermetallic layer remains after the etching process. When using platinum as the metal to form the silicide, the platinum is sheathed with molybdenum before sintering. A titanium layer is placed between the surface of the high work function metal and the outer conductive layers used to permit soldering of the finished wafer or chip in place to avoid degradation of the junction during solder-down
Figure descriptions: cover graphic

  • shows a schematic cross-sectional view of a portion of a semiconductor wafer of which can be used in carrying out the present invention, and in which a guard ring has been diffused, after process steps which leave a palladiumdiffused silicon surface.

 Citations [54]:
3,515,583 06/1970 Inoue 3,669,730 06/1972 Lepselter 3,906,540 09/1975 Hollins 3,938,243 02/1976 Rosuold 3,968,272 07/1976 Anud 4,110,488 08/1978 Risko
National Museum of American History
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