United States Patent 4,209,349
June 24, 1980

Method For Forming A Narrow Dimensioned Mask Opening On A Silicon Body Utilizing Reactive Ion Etching
Irving T. Ho
Jacob Riseman

Filed November 3, 1978
Image of US PATENT 4,209,349

Abstract of the Disclosure

A method for forming a narrow, such as a submicrometer, dimensioned mask opening on a silicon body involving forming a first insulator region having substantially a horizontal surface and a substantially vertical surface. A second insulator is applied on both the horizontal surface and substantially vertical surfaces. The second insulator is composed of a material different from that of the first insulator layer. Reactive ion etching of the second layer removes the horizontal layer and provides a narrow dimensioned second insulator region on the silicon body. The surface of the silicon body is then thermally oxidized. The narrow dimensioned second insulator region is removed to form a narrow dimensioned mask opening
Figure descriptions: cover graphic

  • Figure 1 shows a cross section of a double diffused FET integrated circuit structure.
  • Figure 2 shows an earlier stage in the formation of the structure in Figure 1.

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National Museum of American History
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