United States Patent 4,210,689
July 1, 1980

Method Of Producing Semiconductor Devices
Shigeru Komatsu

Filed December 13, 1978
Image of US PATENT 4,210,689

Abstract of the Disclosure

Semiconductor devices are produced by forming a first insulation film of a relatively high density on a semiconductor substrate having a first semiconductor region formed therein in advance, said first insulation film covering said first semiconductor region, and forming a second insulation film of a relatively low density on the first insulation film. The second insulation film is provided with at least one hole, and the second insulation film is densified to a level substantially equal to that of the first insulation film. Then the exposed portion of the first insulation film is provided with at least one opening with a nitride film used as a mask, and an impurity is diffused through the opening into the first semiconductor region to form therein a second semiconductor region
Figure descriptions: cover graphic

  • cross sectional views showing the steps of producing a semiconductor device by utilizing a conventional self-aligning technique.

 Citations [54]:
4,110,125 08/1978 Beyer 4,131,497 12/1978 Feng et al
National Museum of American History
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