United States Patent 4,212,100
July 15, 1980

Stable N-Channel MOS Structure
John Paivinen
Walter D. Eisenhower, Jr.
Ernest R. Helfrich

Filed September 23, 1977
Image of US PATENT 4,212,100

Abstract of the Disclosure

An N-channel MOS integrated circuit device having a composite metal gate structure which has improved temperature stability. The gate structure uses a polysilicon layer to separate the conventional metal gate from the conventional underlying gate oxide. The metal gate and the polysilicon layer extend laterally at least to the lateral extent of the gate region. This composite metal gate structure improves the temperature stability of the IC, and may be used, for example, in read-only memory (ROM) applications. The polysilicon layer is formed without additional photolithographic steps
Figure descriptions: cover graphic

  • a section through a portion of an integrated circuit made in accordance with the invention.

 Citations [54]:
3,958,323 05/1976 De La Moneda 4,074,300 02/1978 Sakai 4,114,256 09/1978 Thibault 4,115,914 09/1978 Harari
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