United States Patent 4,213,807
July 22, 1980

Method Of Fabricating Semiconductor Devices
Wojciech Rosnowski

Filed April 20, 1979
Image of US PATENT 4,213,807

Abstract of the Disclosure

A method of fabricating a semiconductor device comprising the steps of disposing a layer of dopant material over exposed portions of a surface of a semiconductor body and over portions of a masking layer adjacent the exposed portions, the dopant material having a diffusion coefficient through the masking layer at least about as large as its diffusion coefficient into the body. The dopant material is selectively etched to remove portions overlying the masking layer and thereafter remaining portions of the masking layer are etched to remove any dopant material which might still remain there over
Figure descriptions: cover graphic

  • a perspective view, partially in section, of a typical semiconductor device, not drawn to scale, during one stage of fabrication utilizing a method embodying the principles of the present invention.

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3,415,679 12/1968 Chuss 3,437,533 04/1969 Dingwall 3,535,771 10/1970 Meer et al 3,661,660 05/1972 Wessells 3,887,993 06/1975 Okada et al 4,076,860 02/1978 Kuroda
National Museum of American History
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