United States Patent 4,219,379
August 26, 1980

Method For Making A Semiconductor Device
Terry G. Athanas

Filed September 25, 1978
Image of US PATENT 4,219,379

Abstract of the Disclosure

A method for making a semiconductor device is described in which polycrystalline silicon is vacuum deposited and then converted to silicon dioxide thereby providing a number of advantages over direct deposition of silicon dioxide. The method has particular applicability to isoplanar MOSFET integrated circuit manufacturing.
Figure descriptions: cover graphic

  • a schematic sectional view of a device of the present invention at one stage in a process for making the device.

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