Abstract of the Disclosure

A planar deep oxide isolation process for providing deep wide silicon dioxide filled trenches in the planar surface of a silicon semiconductor substrate, said process comprising the steps:

(a) forming deep wide trenches in the planar surface of the silicon substrate;

(b) forming a thin layer of silicon dioxide on the planar surface of the silicon substrate and the exposed silicon surfaces of said deep wide trenches;

(c) applying resin glass (polysiloxane) to the planar surface of said semiconductor substrate and within said deep wide trenches;

(d) spinning off at least a portion of the resin glass on the planar surface of the substrate;

(e) baking the substrate at a low temperature;

(f) exposing the resin glass contained within the deep wide trenches of substrate to the energy of an E-beam;

(g) developing the resin glass contained on said substrate in a solvent;

(h) heating said substrate in oxygen to convert said resin glass contained within said deep wide trenches to silicon dioxide;

(i) depositing a layer of silicon dioxide to provide a planar silicon dioxide surface on the exposed surface of said substrate; and

(j) planarize exposed silicon dioxide surface to silicon of substrate.

A planar deep oxide isolation process for providing deep wide silicon dioxide filled trenches in the planar surface of a silicon semiconductor substrate as recited in the preceding paragraph, wherein the following steps are performed in lieu of step i of claim 1, said steps comprising:

(i-1) apply a second thin layer of resin glass; and
(i-2) convert said resin glass to silicon dioxide.

• simplified cross-sectional views of a portion of a semiconductor structure at successive stages of the planar deep oxide isolation process in accordance with the invention.

 Citations [54]:
  
3,575,740  04/1971  Castrucci et al
3,832,202  08/1974  Ritchie
3,834,939  09/1974  Beyer et al
3,892,608  07/1975  Kuhn
3,966,577  06/1976  Hochberg
3,985,597  10/1976  Zielinski
3,998,673  12/1976  Chow
4,044,044  01/1977  Franco et al
4,075,044  02/1978  Jager et al
4,104,086  08/1978  Bondur et al
4,139,442  02/1979  Bondur et al