United States Patent 4,224,088
September 23, 1980

Method For Manufacturing A Semiconductor Device
Shigeru Komatsu
Hiroshi Inoue

Filed October 24, 1978
Image of US PATENT 4,224,088

Abstract of the Disclosure

A method for manufacturing steps of depositing phosphorus onto separate portions of a silicon substrate, covering only one portion with a polycrystalline silicon layer and heating the deposited phosphorus on the separate portions at the same time to diffuse thereby forming two diffusion layers of different depths
Figure descriptions: cover graphic

  • a view for illustrating the method of manufacturing a semiconductor device according to an embodiment of this invention.

 Citations [54]:
3,566,218 02/1971 Widlar 3,879,230 04/1975 Nakamura et al 4,069,067 01/1978 Ichinohe 4,144,106 03/1979 Tokeuchi 4,146,413 03/1979 Yonezawa et al
National Museum of American History
HomeSearchChip TalkChip FunPatentsPeoplePicturesCreditsCopyrightComments