United States Patent 4,224,115
September 23, 1980

Process For Forming Electrode On Semiconductor Device
Aiichiro Nara
Hisao Kondo
Takeji Fujiwara
Hideaki Ikegawa

Filed June 26, 1978
Image of US PATENT 4,224,115

Abstract of the Disclosure

Semiconductor substrates electroplated with nickel-paladium alloy consisting of above 50 to 80 atomic percent nickel and below 50 to 20 atomic percent palladium exhibit excellent thermal stability
Figure descriptions: cover graphic

  • a fragmental sectional view of a semiconductor device including an electrode formed thereon by the electroplating process of the present invention.

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3,580,820 05/1971 Yamamura et al 46-25604 07/1971 Japan 3,636,417 01/1972 Kimura 47-33178 08/1972 Japan 3,677,909 07/1972 Yamamura et al 3,699,408 10/1972 Shinoda et al 3,932,880 01/1976 Nara et al
National Museum of American History
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